DOINGTER NB003NG

DOINGTER · FETs & Power MOSFETs · MPN NB003NG

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)8.3nC@10V
Current - Continuous Drain(Id)140A
Output Capacitance(Coss)1.661nF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation143W
RDS(on)2.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.496nF
Number1 N-channel
Input Capacitance(Ciss)10.497nF
TypeN-Channel

Technical details

20V 140A 900mV 143W 2.1mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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