DOINGTER NB002NG

DOINGTER · FETs & Power MOSFETs · MPN NB002NG

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)66nC@4.5V
Current - Continuous Drain(Id)190A
Output Capacitance(Coss)920pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)890pF
RDS(on)2.2Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.6nF
TypeN-Channel

Technical details

20V 190A 700mV 52W 2.2Ω@4.5V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS

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