DOINGTER IRFR1018E-DO

DOINGTER · FETs & Power MOSFETs · MPN IRFR1018E-DO

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Specifications

Gate Charge(Qg)90.3nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)272pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.2nF
TypeN-Channel

Technical details

N-Channel 60V 80A 83W Surface Mount TO-252

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