DOINGTER IPD30N10S3L34A-DO

DOINGTER · FETs & Power MOSFETs · MPN IPD30N10S3L34A-DO

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)126pF
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)99pF
RDS(on)24mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.857nF
TypeN-Channel

Technical details

N-Channel 100V 30A 88W Surface Mount TO-252

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