DOINGTER · FETs & Power MOSFETs · MPN GH2R2TG
No reviews yet — be the first to review DOINGTER GH2R2TG.
| Gate Charge(Qg) | 185nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 2.165nF |
| Current - Continuous Drain(Id) | 350A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 416W |
| RDS(on) | 1.9mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.488nF |
| Type | N-Channel |
100V 350A 3V 416W 1.9mΩ@10V 1 N-channel N-Channel TO-247S Single FETs, MOSFETs RoHS