DOINGTER FO12NFG-C

DOINGTER · FETs & Power MOSFETs · MPN FO12NFG-C

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Specifications

Gate Charge(Qg)43nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)159pF
Current - Continuous Drain(Id)12A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))3V@250uA
Pd - Power Dissipation55W
RDS(on)600mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)4.6pF
Number1 N-channel
Input Capacitance(Ciss)2.1nF
TypeN-Channel

Technical details

650V 12A 3V@250uA 55W 600mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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