DOINGTER FJ09NG-H

DOINGTER · FETs & Power MOSFETs · MPN FJ09NG-H

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)22nC@10V
Output Capacitance(Coss)90.3pF
Current - Continuous Drain(Id)9A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))3.27V@250uA
Pd - Power Dissipation13W
Reverse Transfer Capacitance (Crss@Vds)5.3pF
RDS(on)330mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)550pF
TypeN-Channel

Technical details

200V 9A 3.27V@250uA 13W 330mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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