DOINGTER · FETs & Power MOSFETs · MPN FDD850N10L-DO
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| Gate Charge(Qg) | 6nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 51pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 46W |
| RDS(on) | 75mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.083nF |
| Type | N-Channel |
N-Channel 100V 15A 46W Surface Mount TO-252