DOINGTER DOZ60N04

DOINGTER · FETs & Power MOSFETs · MPN DOZ60N04

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)7.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.313nF
TypeN-Channel

Technical details

N-Channel 40V 60A 35W Surface Mount DFN3x3-8

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