DOINGTER DOZ55N04

DOINGTER · FETs & Power MOSFETs · MPN DOZ55N04

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Specifications

Gate Charge(Qg)19.5nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.03nF
TypeN-Channel

Technical details

N-Channel 40V 55A 28W Surface Mount DFN3x3-8

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