DOINGTER DOZ50N02

DOINGTER · FETs & Power MOSFETs · MPN DOZ50N02

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Specifications

Gate Charge(Qg)23nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation34W
RDS(on)10mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)265pF
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

N-Channel 20V 50A 34W Surface Mount DFN3x3-8

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