DOINGTER DOZ10N10

DOINGTER · FETs & Power MOSFETs · MPN DOZ10N10

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Specifications

Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)125mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)811pF
TypeN-Channel

Technical details

N-Channel 100V 10A 20W Surface Mount DFN3x3-8

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