DOINGTER DOZ100N02

DOINGTER · FETs & Power MOSFETs · MPN DOZ100N02

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)52nC@10V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)860pF
RDS(on)3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.372nF
TypeN-Channel

Technical details

N-Channel 20V 100A 30W Surface Mount DFN3x3-8

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