DOINGTER DOY170N04T

DOINGTER · FETs & Power MOSFETs · MPN DOY170N04T

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)39.8nC@10V
Output Capacitance(Coss)2.793nF
Current - Continuous Drain(Id)170A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation179W
RDS(on)1.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)473pF
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

40V 170A 1.3V 179W 1.7mΩ@10V 1 N-channel N-Channel TDFN3333-8PL Single FETs, MOSFETs RoHS

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