DOINGTER DOW10N02

DOINGTER · FETs & Power MOSFETs · MPN DOW10N02

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Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)12nC@4.5V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.4W
RDS(on)10.4mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)149pF
Number1 N-channel
Input Capacitance(Ciss)1.194nF
TypeN-Channel

Technical details

N-Channel 20V 10A 1.4W Surface Mount SOT-89

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