DOINGTER DOU10N06

DOINGTER · FETs & Power MOSFETs · MPN DOU10N06

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)9.3nC@10V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation25W
RDS(on)60mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 N-channel
Input Capacitance(Ciss)725pF
TypeN-Channel

Technical details

N-Channel 60V 11A 25W Through Hole TO-251

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