DOINGTER DOT8N10

DOINGTER · FETs & Power MOSFETs · MPN DOT8N10

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Specifications

Gate Charge(Qg)2.96nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)31pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.9V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)90mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.008nF
TypeN-Channel

Technical details

N-Channel 100V 8A 2.5W Surface Mount SOT-223

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