DOINGTER DOS9N10

DOINGTER · FETs & Power MOSFETs · MPN DOS9N10

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Specifications

Gate Charge(Qg)14.7nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)517pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.3W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)918pF
TypeN-Channel

Technical details

N-Channel 100V 9A 2.3W Surface Mount SOP-8

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