DOINGTER DOS5521

DOINGTER · FETs & Power MOSFETs · MPN DOS5521

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
RDS(on)200mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF;58pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.05nF;1.455nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 100V 2.2A 2W Surface Mount SOP-8D

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