DOINGTER DOS2P10

DOINGTER · FETs & Power MOSFETs · MPN DOS2P10

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.3nF
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)200mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.2nF
TypeP-Channel

Technical details

P-Channel 100V 1.8A 2W Surface Mount SOP-8

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