DOINGTER DOS11N10

DOINGTER · FETs & Power MOSFETs · MPN DOS11N10

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)305.7pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.5W
Reverse Transfer Capacitance (Crss@Vds)9.6pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.1458nF
TypeN-Channel

Technical details

N-Channel 100V 11A 3.5W Surface Mount SOP-8

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