DOINGTER DOPF8N65S

DOINGTER · FETs & Power MOSFETs · MPN DOPF8N65S

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Specifications

Gate Charge(Qg)8.1nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)43.2pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)2.4pF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)301pF
TypeN-Channel

Technical details

N-Channel 650V 8A 40W Through Hole TO-220F

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