DOINGTER DOPF50N10-L

DOINGTER · FETs & Power MOSFETs · MPN DOPF50N10-L

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Specifications

Gate Charge(Qg)47nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)865pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)14.7pF
RDS(on)11mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.289nF
TypeN-Channel

Technical details

N-Channel 100V 50A 156W Through Hole TO-220F

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