DOINGTER DOPF40N10-L

DOINGTER · FETs & Power MOSFETs · MPN DOPF40N10-L

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Specifications

Gate Charge(Qg)31.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)441pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation38.5W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)7.8pF
Number1 N-channel
Input Capacitance(Ciss)1.615nF
TypeN-Channel

Technical details

N-Channel 100V 40A 38.5W Through Hole TO-220F

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