DOINGTER DOPF20N65

DOINGTER · FETs & Power MOSFETs · MPN DOPF20N65

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Specifications

Gate Charge(Qg)53.2nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)226.1pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation85W
RDS(on)350mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)14.3pF
Input Capacitance(Ciss)2.002nF
TypeN-Channel

Technical details

N-Channel 650V 20A 85W Through Hole TO-220F

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