DOINGTER DOPF18N65S

DOINGTER · FETs & Power MOSFETs · MPN DOPF18N65S

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Specifications

Gate Charge(Qg)40.8nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)51.2pF
Current - Continuous Drain(Id)18A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)8.3pF
RDS(on)120mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)836.7pF
TypeN-Channel

Technical details

N-Channel 650V 18A 40W Through Hole TO-220F

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