DOINGTER DOPF13N50

DOINGTER · FETs & Power MOSFETs · MPN DOPF13N50

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Specifications

Gate Charge(Qg)45.2nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)211pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)23.1pF
RDS(on)500mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.16nF
TypeN-Channel

Technical details

N-Channel 500V 13A 48W Through Hole TO-220F

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