DOINGTER · FETs & Power MOSFETs · MPN DOPF12N65
No reviews yet — be the first to review DOINGTER DOPF12N65.
| Gate Charge(Qg) | 40.2nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 160.8pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 51.5W |
| RDS(on) | 650mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF |
| Input Capacitance(Ciss) | 2.002nF |
| Type | N-Channel |
N-Channel 650V 12A 51.5W Through Hole TO-220F