DOINGTER DOP9N20

DOINGTER · FETs & Power MOSFETs · MPN DOP9N20

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Specifications

Configuration-
Gate Charge(Qg)17nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation88W
RDS(on)300mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)23pF
Number1 N-channel
Input Capacitance(Ciss)536pF
TypeN-Channel

Technical details

N-Channel 200V 6A 88W Through Hole TO-220

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