DOINGTER DOP90N10-L

DOINGTER · FETs & Power MOSFETs · MPN DOP90N10-L

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.254nF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation85W
RDS(on)7.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)47pF
Input Capacitance(Ciss)2.52nF
TypeN-Channel

Technical details

N-Channel 100V 90A 85W Through Hole TO-220

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