DOINGTER DOP85P06

DOINGTER · FETs & Power MOSFETs · MPN DOP85P06

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Specifications

Gate Charge(Qg)139nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)209pF
RDS(on)14mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)8.699nF
TypeP-Channel

Technical details

P-Channel 60V 85A 130W Through Hole TO-220

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