DOINGTER DOP50N06

DOINGTER · FETs & Power MOSFETs · MPN DOP50N06

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)48nC@10V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

N-Channel 60V 50A 85W Through Hole TO-220

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