DOINGTER DOP40P10

DOINGTER · FETs & Power MOSFETs · MPN DOP40P10

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Specifications

Gate Charge(Qg)146nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation115W
RDS(on)56mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)69pF
Input Capacitance(Ciss)8.055nF
TypeP-Channel

Technical details

P-Channel 100V 40A 115W Through Hole TO-220

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