DOINGTER DOP20N06

DOINGTER · FETs & Power MOSFETs · MPN DOP20N06

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation52.1W
RDS(on)35mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)46pF
Number1 N-channel
Input Capacitance(Ciss)1.027nF
TypeN-Channel

Technical details

N-Channel 60V 20A 52.1W Through Hole TO-220

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