DOINGTER · FETs & Power MOSFETs · MPN DOP18N20
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 41.1nC@10V |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 140mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.173nF |
| Type | N-Channel |
N-Channel 200V 18A 100W Through Hole TO-220