DOINGTER DOP15N10T

DOINGTER · FETs & Power MOSFETs · MPN DOP15N10T

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Specifications

Gate Charge(Qg)6.4nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation44W
RDS(on)75mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)16.6pF
Number1 N-channel
Input Capacitance(Ciss)309pF
TypeN-Channel

Technical details

N-Channel 100V 15A 44W Through Hole TO-220

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