DOINGTER DOP15N10

DOINGTER · FETs & Power MOSFETs · MPN DOP15N10

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Specifications

Gate Charge(Qg)21nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)90mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.03nF
TypeN-Channel

Technical details

N-Channel 100V 15A 52W Through Hole TO-220

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