DOINGTER DOP150N03

DOINGTER · FETs & Power MOSFETs · MPN DOP150N03

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)37nC@10V
Configuration-
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation109W
RDS(on)3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)430pF
Number1 N-channel
Input Capacitance(Ciss)3.498nF
TypeN-Channel

Technical details

N-Channel 30V 150A 109W Through Hole TO-220

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