DOINGTER · FETs & Power MOSFETs · MPN DOP12P10
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| Gate Charge(Qg) | 25nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 40W |
| RDS(on) | 200mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 760pF |
| Type | P-Channel |
P-Channel 100V 12A 40W Through Hole TO-220