DOINGTER DOP120N04

DOINGTER · FETs & Power MOSFETs · MPN DOP120N04

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Specifications

Gate Charge(Qg)75nC@10V
Configuration-
Drain to Source Voltage40V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation130W
RDS(on)4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)380pF
Number1 N-channel
Input Capacitance(Ciss)5.4nF
TypeN-Channel

Technical details

N-Channel 40V 120A 130W Through Hole TO-220

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