DOINGTER DOP110P04

DOINGTER · FETs & Power MOSFETs · MPN DOP110P04

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)120nC@10V
Output Capacitance(Coss)525pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation115W
RDS(on)5.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)335pF
Input Capacitance(Ciss)6.338nF
TypeP-Channel

Technical details

P-Channel 40V 110A 115W Through Hole TO-220

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