DOINGTER DON85N10T

DOINGTER · FETs & Power MOSFETs · MPN DON85N10T

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)451pF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation125W
RDS(on)5.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)3nF
TypeN-Channel

Technical details

N-Channel 100V 85A 125W Surface Mount DFN5x6-8

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