DOINGTER DON80N10-L

DOINGTER · FETs & Power MOSFETs · MPN DON80N10-L

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Specifications

Gate Charge(Qg)47nC
Drain to Source Voltage100V
Output Capacitance(Coss)1.254nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)47pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.38nF
TypeN-Channel

Technical details

N-Channel 100V 80A 125W Surface Mount DFN5x6-8

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