DOINGTER DON80N04T

DOINGTER · FETs & Power MOSFETs · MPN DON80N04T

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Specifications

Gate Charge(Qg)25.2nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation59.5W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.724nF
TypeN-Channel

Technical details

N-Channel 40V 80A 59.5W Surface Mount DFN5x6-8

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