DOINGTER DON55N10

DOINGTER · FETs & Power MOSFETs · MPN DON55N10

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Specifications

Gate Charge(Qg)36.75nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)798pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)31.5pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.425nF
TypeN-Channel

Technical details

N-Channel 100V 55A 52W Surface Mount DFN5x6-8

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