DOINGTER DON55N06

DOINGTER · FETs & Power MOSFETs · MPN DON55N06

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Specifications

Gate Charge(Qg)18.4nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)3.8pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.122nF
TypeN-Channel

Technical details

N-Channel 60V 55A 60W Surface Mount DFN5x6-8

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