DOINGTER DON50N10-TL

DOINGTER · FETs & Power MOSFETs · MPN DON50N10-TL

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)312pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation71.4W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)6pF
Number1 N-channel
Input Capacitance(Ciss)1.09nF
TypeN-Channel

Technical details

100V 50A 1.7V 71.4W 11mΩ@10V 1 N-channel N-Channel DFN5x6-8 Single FETs, MOSFETs RoHS

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