DOINGTER · FETs & Power MOSFETs · MPN DON4N65S
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| Gate Charge(Qg) | 6nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 21pF |
| Current - Continuous Drain(Id) | 3.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 22W |
| RDS(on) | 1Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 180pF |
| Type | N-Channel |
650V 3.5A 3.5V 22W 1Ω@10V 1 N-channel N-Channel DFN5x6-8 Single FETs, MOSFETs RoHS