DOINGTER DON30P10T

DOINGTER · FETs & Power MOSFETs · MPN DON30P10T

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation78W
RDS(on)65mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)27pF
Number1 P-Channel
Input Capacitance(Ciss)2.1nF
TypeP-Channel

Technical details

P-Channel 100V 30A 78W Surface Mount DFN5x6-8

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