DOINGTER DON110P03

DOINGTER · FETs & Power MOSFETs · MPN DON110P03

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Specifications

Gate Charge(Qg)96nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation100W
RDS(on)8mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)719pF
Number1 P-Channel
Input Capacitance(Ciss)4.349nF
TypeP-Channel

Technical details

P-Channel 30V 110A 100W Surface Mount DFN5x6-8

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